Inner circuit
(1) (2) (3) (2)
2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. (1)
(1) Gate (2) Drain.
1 (3) Source.
1 Body Diode
5) Parallel use is easy. (3)
6) Pb-free lead plating ; RoHS compliant.
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R8002ANX
Nch 800V 2A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
Features 1) Low on-resistance.
800V 4.3 2A 36W
Outline
TO-220FM
Inner circuit
(1) (2) (3) (2)
2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple.
(1)
(1) Gate (2) Drain *1 (3) Source
*1 Body Diode
5) Parallel use is easy.
R8002ANX Datasheet
