ROHM Semiconductor RB021VA-90
Schottky Barrier Diode
Diodes Schottky barrier diode RB021VA-90 RB021VA-90 zApplications General rectification zFeatures 1) Small power mold type (TUMD2) 2) Low VF 3) High reliability zStructure Silicon epitaxial planar zExternal dimensions (Unit : mm) 1.3±0.05 0.17±0.1 0.05 zLand size figure (Unit : mm) 1.1 1.9±0.1 2.5±0.2 0.8 0.5 2.0 0.8±0.05 ROHM : TUMD2 0.6±0.2 0.1 dot (year week factory) + day zTaping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.1 0 TUMD2 zStructure 0.25±0.05 1.75±0.1 3.5±0.05 2.75 8.0±0.2 2.8±0.05 1.43±0.05 4.0±0.1 φ1.0±0.2 0 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak(60Hz●1cyc) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 90 90 0.2 5 125 -40 to +125 0.9±0.08 Unit V V A A ℃ ℃ zElectrical characteristic (Ta=25°C) Parameter Symbol Fo