ROHM Semiconductor RB058L150DD
Schottky Barrier Diode
FEATURES
High reliability d Small power mold type Super low IR●Inner Circuit nde s
●Application
●Packaging Specifications e n General rectification Packing Embossed Tape Reel Size(mm) 180 m ig
●Structure Taping Width(mm) 12 Basic Ordering Unit(pcs) 1500 s Silicon epitaxial planar Taping Code TE25 Marking 98 m e
●
ABSOLUTE MAXIMUM RATINGS
(Ta=25ºC unless otherwise specified) o Parameter Symbol Conditions Limits Unit D Repetitive peak reverse voltage c Reverse voltage e w Average rectified forward current VRM Duty≦0.5 150 V VR Reverse direct voltage 150 V Glass epoxy mounted、 Io 60Hz half sin waveform、resistive load、 3 A Tc=87℃ Max. R e Peak forward surge current IFSM 60Hz half sin waveform、Non-repetitive、 one cycle、Ta=25℃ 90 A Junction temperature t N Storage temperature Tj - Tstg - 150 ℃ -55 ~ 150 ℃ o●Characteristics (Ta=25ºC unless otherwise specified) N Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage VF IF=3A - 0.76 0.85 V Reverse current IR VR=150V - 0.1 3 μA Attention © 2016 ROHMCo., Ltd.All rights reserved.