ROHM Semiconductor RB068MM100
Schottky Barrier Diode
FEATURES
1) Small power mold type (PMDU) 2) High reliability 3) Super low IR●Construction Silicon epitaxial planar type PMDU 0.9±0.1 ROHM : PMDU JEDEC : SOD-123FL : Manufacture Date 0.8±0.1
●Structure
●Taping Dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ 1.55±0.05 Cathode Anode 0.25±0.05 1.75±0.1 8.0±0.2 3.71±0.1 3.5±0.05 1.81±0.1 4.0±0.1 φ 1.0±0.1 1.5MAX
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ABSOLUTE MAXIMUM RATINGS
(Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 100 V Reverse voltage VR Direct reverse voltage Average forward rectified current Non-repetitive forward current surge peak Io IFSM Glass epoxy board mounted, 60Hz half sin wave, resistive load , Tc=80ºC Max. 60Hz half sin wave, 1cycle, non-repetitive at T