Overview: .. RB085B-90
Diodes Schottky barrier diode
RB085B-90
zApplications General rectification zDimensions (Unit : mm) zLand size figure (Unit : mm) 6.0
6.5±0.2 5.1±0.2 0.1 C0.5 1.5±0.3 2.3±0.2 0.1 0.5±0.1 ①
1.5 zConstruction Silicon epitaxial planar 0.75 0.9 （1） （2） （3） 0.65±0.1 2.5 9.5±0.6 CPD
0.5±0.1 1.0±0.2 2.3 2.3 2.3±0.2 2.3±0.2 zStructure ROHM : CPD JEITA : SC-63 ① Manufacture Date zTaping dimensions (Unit : mm)
4.0±0.1 2.0±0.05 8.0±0.1 φ1.55±0.1 0 2.5±0.1 0.4±0.1 7.5±0.05 10.1±0.1 6.8±0.1 8.0±0.1 φ3.0±0.1 0～0.5 13.5±0.2 10.1±0.1 2.7±0.2 TL zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) VRM VR Reverse voltage (DC) Average rectified forward current（*1） Io Forward current surge peak （60Hz・1cyc）（*1） IFSM Junction temperature Tj Storage temperature Tstg Limits 90 90 10 45 150 -40 to +150 Unit V V A A ℃ ℃ (*1)Rating of per diode : Io/2
zElectrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR θjc Min. - Typ. - Max. 0.83 150 6.0 Unit V µA ℃/W Conditions IF=5.0A VR=90V junction to case 16.0±0.2 3.0 2.
