ROHM Semiconductor RB085T-60NZ
Schottky Barrier Diode
| Part No. | RB085T-60NZ |
|---|---|
| Datasheet | RB085T-60NZ Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Schottky Barrier Diode |
| Buy | Stock & Price |
APPLICATIONS
Switching power supply●Dimensions (Unit : mm)
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FEATURES
1) Cathode common type. (TO-220) 2) Low IR 3) High reliability●Construction Silicon epitaxial planer Data Sheet
●Structure (1) (2) (3)
●Packing Dimensions (Unit : mm) 7 540 34.5
●Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) VRM 60 VR 60 Io 10 Forward current surge peak (60Hz / 1cyc) (*1) Junction temperature IFSM Tj 100 150 Storage temperature Tstg 40 to 150 (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=130C
●Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Thermal impedance Symbol Min. Typ. Max. VF - - 0.58 IR - - 300
●jc - - 2.5 Unit V V A A C C Unit V A C/W Conditions IF=5A VR=60V junction to case © 2016 ROHM Co., Ltd. All rights reserved. 1/3
