ROHM Semiconductor RB088T150
Schottky Barrier Diode
| Part No. | RB088T150 |
|---|---|
| Datasheet | RB088T150 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Schottky Barrier Diode |
| Buy | Stock & Price |
FEATURES
1) Cathode common dual type 2) Low IR 3) High reliability 4) AEC-Q101 qualified (Limited to HR Type)●Construction Silicon epitaxial planar
●External dimensions (Unit : mm) 10.0±0.3 0.1 4.5±0.3 0.1 2.8±0.2 0.1 1 1.2 1.3 0.8 (1) (2) (3) 2.54±0.5 0.07.75±0.1 0.05 2.6±0.5
●Structure (2) (1) (3) (1) Anode (2) Cathode (3) Anode ROHM : TO220FN 1 Manufacture Date
●Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) VRM VR Io 150 150 10 Forward current surge peak (60Hz●1cyc)(*2) Junction temperature IFSM Tj 50 150 Storage temperature Tstg 55 to 150 (*1) 1/2 Io per Diode. Mounting on epoxi board. 180°Half sine wave (*2) Per Diode. Unit V V
