ROHM Semiconductor RB160SS-30
Schottky Barrier Diode
MAXIMUM RATINGS
(Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 30 V Reverse voltage VR Direct reverse voltage Average forward rectified current Non-repetitive forward current surge peak Io IFSM Glass epoxy board mounted, 60Hz half sin wave, resistive load 60Hz half sin wave, Non-repetitive at Ta=25ºC , 1cycle Operating junction temperature Tj - 30 1 5 150 V A A °C Storage temperature Tstg - -55 to +150 °C lElectrical Characteristics (