RB160SS-40 Datasheet PDF

Data Sheet Schottky Barrier Diode RB160SS-40 lApplications Small current rectification lDimensions (Unit : mm) lLand size figure (Unit : mm) 0.8 1.6 ±0.05 1.2 ±0.05 0.5 0.4 ±0.05 lFeatures 1)Small power mold type (KMD2) 2)High reliability 3)Low IR 0 ～0.03 KMD2 0.8 ±0.05 0.6 ±0.03 0.7 ±0.05 lConstruction Silicon epitaxial planer ROHM : KMD2 JEDEC :JEITA : dot (year week factory) lStructure lTaping dimensions (Unit : mm) lAbsolute maximum ratings (Ta=25C) Parameter Limits Symbol VRM Reverse voltage (repetitive peak) 40 VR Reverse voltage (DC) 40 Average rectified forward current (*1) 1 Io IFSM Forward current surge peak(60Hz･1cyc.) 5 Junction temperature 150 Tj Storage temperature -40 to +150 Tstg (*1) On the Glass epoxy substrate , 180°Half Sine wave lElectrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage Reverse current IR Unit V V A A C C Min. - Typ. 0.50 3.00 Max. 0.55 50.00 Unit V μA Conditions IF=0.7A VR=40V © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.1...