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RB161SS-30 - Schottky Barrier Diode

Key Features

  • 1) Small power mold type (KMD2) 2) High reliability 3) Super low VF lConstruction Silicon epitaxial planar type 0～0.03 0.8±0.05 0.6±0.03 ROHM : KMD2 JEDEC : JEITA : - : Dot (Year, week, factory) 0.7±0.05 lTaping Dimensions (Unit : mm) KMD2 lStructure (1) Cathode (2) Anode lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 40 V Reverse voltage VR Direct reverse voltage Average forward rectified current Non-r.

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Datasheet Details

Part number RB161SS-30
Manufacturer ROHM
File Size 443.92 KB
Description Schottky Barrier Diode
Datasheet download datasheet RB161SS-30 Datasheet

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Other Datasheets by ROHM

Part Number Description
RB161SS-20 Schottky Barrier Diode
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diode RB161SS-30 lApplication General rectification lDimensions (Unit : mm) Data Sheet lLand Size Figure (Unit : mm) 0.8 1.6±0.05 0.4±0.05 1.2±0.05 0.5 1.2 AJ lFeatures 1) Small power mold type (KMD2) 2) High reliability 3) Super low VF lConstruction Silicon epitaxial planar type 0～0.03 0.8±0.05 0.6±0.03 ROHM : KMD2 JEDEC : JEITA : - : Dot (Year, week, factory) 0.7±0.05 lTaping Dimensions (Unit : mm) KMD2 lStructure (1) Cathode (2) Anode lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.