ROHM Semiconductor RB162L-40
Schottky Barrier Diode
| Part No. | RB162L-40 |
|---|---|
| Datasheet | RB162L-40 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Schottky Barrier Diode |
| Buy | Stock & Price |
APPLICATIONS
General rectification●Dimensions (Unit : mm)
●Land size figure (Unit : mm) 2.0 2.0 2.6±0.2 ① ② 0.1±0.02 0.1 5.0±0.3 4 2 4.5±0.2
●
FEATURES
1)Small power mold type. (PMDS) 2)High reliability. 1.2±0.3 1.5±0.2 2.0±0.2 PMDS●Structure Silicon epitaxial planer ROHM : PMDS JEDEC : SOD-106 Manufacture Date ① ②
●Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.3 5.5±0.05 1.75±0.1 φ1.55 2.9±0.1 4.0±0.1 2.8MAX
●Absolute maximum ratings (Ta=25C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz●1cyc) Junction temperature Tj Storage temperature Tstg (*1)Mounted on glass epoxy board
●Electrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage Reverse current IR Limits 40 40 1 20 150 40 to 150 Unit V V A A C C Min. - Typ. - Max. 0.55 0.1 Unit V mA Conditions IF=1.0A VR=40V © 2011 ROHM Co., Ltd. All rights reserved. 1/4 5.3±0.1 0.05 9.5±0.1 2011.12 - Rev.A...
