ROHM Semiconductor RB162L-60
Schottky Barrier Diode
| Part No. | RB162L-60 |
|---|---|
| Datasheet | RB162L-60 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Schottky Barrier Diode |
| Buy | Stock & Price |
APPLICATIONS
General rectification●Dimensions (Unit : mm)
●Land size figure (Unit : mm) 2.0 2.0
●
FEATURES
1) Small power mold type. (PMDS) 2) High switching speed 3) Low forward voltage●Construction Silicon epitaxial planer PMDS
●Structure
●Taping dimensions (Unit : mm)
●Absolute maximum ratings (Tl=25 C) Parameter Symbol Repetitive peak reverse voltage VRM Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature VR Io IFSM Tj Tstg Conditions D0.5 Direct voltage Glass epoxy substrate mounted R-road, 60Hz half sin wave 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25 C Limits 60 60 1.0 20 150 -40 to +150 4.2 Unit V V A A C C
●Electrical characteristics (Tj=25 C) Parameter Symbol Forward voltage VF Reverse current IR Conditions IF=1.0A VR=60V Min. - Typ. 0.54 4 Max. 0.65 100 Unit V μA ©2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.02 - Rev.A RB162L-60
●Electrical characteristics curves 1 Tj=150 C REVE...
