ROHM Semiconductor RB162M-30
Schottky Barrier Diode
| Part No. | RB162M-30 |
|---|---|
| Datasheet | RB162M-30 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Schottky Barrier Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
(Ta=25°C) Parameter Symbol Reverse voltage (repetitive) VRM Reverse voltage (DC) VR Average rectified forward current (*1) Io Forward current surge peak (60Hz●1cyc) IFSM Junction temperature Tj Storage temperature Tstg (*1)Mounting on epoxi board. 180°Half sine wave lElectrical Characteristics(Ta=25°C) Parameter Forward voltage Reverse current Symbol VF1 IR Limits 30 30 1 30 150 -55 to +150 Min. Typ. Max. - 0.44 0.52 - 10 100 Unit V V A A °C °C Unit V mA 1.5MAX Conditions IF=1.0A VR=30V © 2015 ROHM Co., Ltd. All rights reserved. 1/4 2015.09 - Rev.B RB162M-30 Data Sheet FORWARD CURRENT:IF(A) REVERSE CURRENT:IR(mA) for CAPACITANCEimgeBETWEENnnsded TERMINALS:Ct(pF) 1 Ta = 150°C 0.1 Ta = 125°C 0.01 0.001 0 Ta = 75°C Ta = 25°C Ta = -25°C 100 200 300 400 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 500 1000 f = 1MHz 100 10 0 30 25 20 15 10 5 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 Ta=25°C VR=30V n=30pcs AVE : 6.1mA IR DISPERSION MAP CAPACITANCE BETWEEN T...
