ROHM Semiconductor RB162M-40
Schottky Barrier Diode
| Part No. | RB162M-40 |
|---|---|
| Datasheet | RB162M-40 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Schottky Barrier Diode |
| Buy | Stock & Price |
APPLICATIONS
General rectification●Dimensions(Unit : mm)
●
FEATURES
1)Small power mold type.(PMDU) 2)Low IR 3)High reliability●Construction Silicon epitaxial planer 3.5±0.12r 0.85 3.05 Data Sheet ●Land size figure(Unit : mm) 1.2 PMDU
●Structure
●Taping specifications(Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.25±0.05 1.75±0.1nnsded fo 8.0±0.2 33..7711±±0.0.018 1.81±0.1 4.0±0.1 φ1.0±0.1 1.5MAX
●Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current (*1) VRM VR Io Forward current surge peak (60Hz / 1cyc) Junction temperature Storage temperature IFSM Tj Tstg (*1)Mounted on epoxy board. (Tc=100°C MAX ) Limits 40 40 1 30 150 40 to 150
●Electrical characteristics(Ta=25C) Parameter Forward voltage Reverse current Symbol Min. Typ. Max. VF - - 0.55 IR - - 100 Unit V V A A C C Unit Conditions V IF=1A μA VR=40V © 2015 ROHM Co., Ltd. All rights reserved. 1/3 2015.09 - Rev.B FORWARD CURRENT : IF(mA) REVERSE CURREN...
