ROHM Semiconductor RB238NS-30
Schottky Barrier Diode
MAXIMUM RATINGS
(Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 35 V Reverse voltage Average forward rectified current Non-repetitive forward current surge peak Operating junction temperature VR Io IFSM Tj Direct reverse voltage 60Hz half sin wave, resistive load, IO/2 per diode, Tc=90ºC Max. 60Hz half sin wave, Non-repetitive at Ta=25ºC , 1cycle, per diode - 30 V 40 A 100 A 150 °C Storage temperature Tstg - -55 to +150 °C lElectrical and Thermal C