ROHM Semiconductor RB480K
Shottky barrier diode
FEATURES
1) Ultra small mold type. (UMD4) 2) Low IR 3) High reliability●Construction Silicon epitaxial planar
●Dimensions (Unit : mm) Each lead has same dimension
●Land size figure (Unit : mm) 0.6 0.9MIN 1.6 UMD4 1.3 ROHM : UMD4 JEDEC : SOT-343 JEITA : SC-82
●Structure dot (year week factory) 1Pin Mark
●Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.3±0.1 1.75± 0.1 8.0± 0.2 3.5 ± 0.05 2.4± 0.1 2.4± 0.1 2.45± 0.1 5.5± 0.2 0 0.5 2.2±0.1 4.0±0.1 φ1.1±0.1 1.15±0.1
●Absolute maximum ratings (Ta = 25°C) Parameter Symbol Reverse voltage (repetitive peak) Reverse voltage (DC) VRM VR Average rectified forward current (*1) Io Forward current surge peak (60Hz●1cyc) (*1) Junction temperature IFSM Tj Storage temperature Tstg (*1) Rating of per diode Limits 45 40 100 1 125 −40 to +125 Unit V V mA A °C °C
●Electrical characteristics (Ta= 25°C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol Min. Typ. Max. Unit Conditions VF1 - - 0.45 V IF=10mA VF2 - - 0.6 V IF=100mA IR1 - - 1 μA VR=10V IR2 - - 5 μA VR=40V Ct1 - 6 - pF VR=10V, f=1MHz Ct2 - - 25 pF VR=0V © 2012 ROHM Co., Ltd.