RB501V-40 - Schottky barrier diode

ROHM

Key Features

1) Ultra Small mold type. (UMD2) 2) Low IR 3) High reliability. lConstruction Silicon epitaxial planar UMD2 lStructure 0.3±0.05 0.7±0.2 　 0.1 ROHM : UMD2 JEITA : SC-90/A JEDEC :SOD-323 dot (year week factory) lTaping specifications (Unit : mm) Cathode Anode lAbsolute maximum ratings (Ta= 25°C) Parameter Symbol Reverse voltage (repetitive peak) VRM Reverse voltage (DC) VR Average rectified forward current Io Forward current surge peak (60Hz1cyc) IFSM Junction temperature Tj S.

RB501V-40 schottky barrier diode by ROHM - Datasheet Preview

Datasheet Details

Part number	RB501V-40
Manufacturer	ROHM
File Size	765.66 KB
Description	Schottky barrier diode
Datasheet	RB501V-40 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diode RB501V-40 lApplication Low current rectification lDimensions (Unit : mm) 1.25±0.1 0.1±0.1 　 0.05 Datasheet lLand size figure (Unit : mm) 0.9MIN. 1.7±0.1 2.5±0.2 0.8MIN. 2.1 lFeatures 1) Ultra Small mold type. (UMD2) 2) Low IR 3) High reliability. lConstruction Silicon epitaxial planar UMD2 lStructure 0.3±0.05 0.7±0.2 　 0.