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RB520CS-30 - Schottky barrier diode

Key Features

  • 1) Ultra Small power mold type. (VMN2) 2) Low IR 3)High reliability. zConstruction Silicon epitaxial planar 0.45 0.45 0.5 z Land size figure (Unit : mm) 0.55 VMN2 zStructure zTaping specifications (Unit : mm) zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (DC) Average rectiied forward current Forward current surge peak （60Hz/1cyc） Junction temperature Storage temperature Symbol VR Io IFSM Tj Tstg Limits 30 100 500 150 -40 to +150 Unit V mA mA °C °C zElectrical characteris.

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Datasheet Details

Part number RB520CS-30
Manufacturer ROHM
File Size 404.32 KB
Description Schottky barrier diode
Datasheet download datasheet RB520CS-30 Datasheet

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Schottky barrier diode RB520CS-30 zApplications Low current rectification z Dimensions (Unit : mm) zFeatures 1) Ultra Small power mold type. (VMN2) 2) Low IR 3)High reliability. zConstruction Silicon epitaxial planar 0.45 0.45 0.5 z Land size figure (Unit : mm) 0.55 VMN2 zStructure zTaping specifications (Unit : mm) zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (DC) Average rectiied forward current Forward current surge peak （60Hz/1cyc） Junction temperature Storage temperature Symbol VR Io IFSM Tj Tstg Limits 30 100 500 150 -40 to +150 Unit V mA mA °C °C zElectrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol Min. Typ. Max. VF - - 0.45 IR - - 0.5 Unit Conditions V IF=10mA µA VR=10V www.rohm.com ©2009 ROHM Co., Ltd.