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RB520G-30 - Schottky barrier diode

Key Features

  • 1) Ultra Small mold type. (VMD2) 2) Low IR. 3) High reliability. zConstruction Silicon epitaxial planar 0.27±0.03 0.5±0.05 ROHM : VMD2 dot (year week factory) 0.5 1.2 z Land size figure (Unit : mm) 0.5 VMD2 zStructure z Taping specifications (Unit : mm) 4±0.1 2±0.05 φ1.5+0.1 　　　　　0 0.18±0.05 1.75±0.1 0.4 3.5±0.05 8.0±0.3 0.1 2.1±0.1 1.11±0.05 0.76±0.1 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage(DC) Average rectified forward current Forward current surge peak （60.

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Datasheet Details

Part number RB520G-30
Manufacturer ROHM
File Size 106.37 KB
Description Schottky barrier diode
Datasheet download datasheet RB520G-30 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Diodes Schottky barrier diode RB520G-30 RB520G-30 zApplications Low current rectification z Dimensions (Unit : mm) 0.6±0.05 0.13±0.03 1.0±0.05 1.4±0.05 zFeatures 1) Ultra Small mold type. (VMD2) 2) Low IR. 3) High reliability. zConstruction Silicon epitaxial planar 0.27±0.03 0.5±0.05 ROHM : VMD2 dot (year week factory) 0.5 1.2 z Land size figure (Unit : mm) 0.5 VMD2 zStructure z Taping specifications (Unit : mm) 4±0.1 2±0.05 φ1.5+0.1 　　　　　0 0.18±0.05 1.75±0.1 0.4 3.5±0.05 8.0±0.3 0.1 2.1±0.1 1.11±0.05 0.76±0.1 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage(DC) Average rectified forward current Forward current surge peak （60Hz1cyc） Junction temperature Storage temperature Symbol VR Io IFSM Tj Tstg 4±0.1 2±0.05 φ0.