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RB521CS-30 - Schottky barrier diode

Key Features

  • 1) Ultra Small power mold type (VMN2) 2) Low VF 3) High reliability zStructure zStructure Silicon epitaxial planer zTaping dimensions (Unit : mm) zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (DC) VR Average rectifierd forward current Io Forward current surge peak (60Hz/1cyc) IFSM Junction temperature Tj Storage temperature Tstg Limits 30 100 500 150 -40 to +150 Unit V mA mA °C °C zElectrical characteristic (Ta=25°C) Parameter Forward vpltage Reverse current Symbol.

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Datasheet Details

Part number RB521CS-30
Manufacturer ROHM
File Size 384.56 KB
Description Schottky barrier diode
Datasheet download datasheet RB521CS-30 Datasheet

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www.DataSheet4U.com Schottky barrier diode RB521CS-30 zApplications Low current rectification zDimensions (Unit : mm) zLand size figure (Unit : mm) zFeatures 1) Ultra Small power mold type (VMN2) 2) Low VF 3) High reliability zStructure zStructure Silicon epitaxial planer zTaping dimensions (Unit : mm) zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (DC) VR Average rectifierd forward current Io Forward current surge peak (60Hz/1cyc) IFSM Junction temperature Tj Storage temperature Tstg Limits 30 100 500 150 -40 to +150 Unit V mA mA °C °C zElectrical characteristic (Ta=25°C) Parameter Forward vpltage Reverse current Symbol VF IR Min. - Typ. - Max. 0.35 10 Unit V µA IF=10mA VR=10V Conditions www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved.