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RB550SS-30 - Schottky Barrier Diode

Key Features

  • 1)Small mold type (KMD2) 2)High reliability 3)Low IR 0.8±0.05 1.6±0.05 1.2±0.05 0～0.03 KMD2.
  • Structure 0.6±0.03 0.7±0.05.
  • Construction Silicon epitaxial planer ROHM : KMD2 JEDEC :JEITA : dot (year week factory).
  • Taping dimensions (Unit : mm) www. DataSheet. co. kr.
  • Absolute maximum ratings (Ta=25C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forward current (.
  • 1) Io Forward current surge peak (60Hz ･1cyc. ) Limits.

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Datasheet Details

Part number RB550SS-30
Manufacturer ROHM
File Size 1.24 MB
Description Schottky Barrier Diode
Datasheet download datasheet RB550SS-30 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet Schottky Barrier Diode RB550SS-30 Applications Small current rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 0.8 0.5 0.4±0.05 Features 1)Small mold type (KMD2) 2)High reliability 3)Low IR 0.8±0.05 1.6±0.05 1.2±0.05 0～0.03 KMD2 Structure 0.6±0.03 0.7±0.05 Construction Silicon epitaxial planer ROHM : KMD2 JEDEC :JEITA : dot (year week factory) Taping dimensions (Unit : mm) www.DataSheet.co.kr Absolute maximum ratings (Ta=25C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forward current (*1) Io Forward current surge peak (60Hz ･1cyc.) Limits 30 30 0.