ROHM Semiconductor RB550SS-30
Schottky Barrier Diode
| Part No. | RB550SS-30 |
|---|---|
| Datasheet | RB550SS-30 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Schottky Barrier Diode |
| Buy | Stock & Price |
APPLICATIONS
Small current rectification●Dimensions (Unit : mm)
●Land size figure (Unit : mm) 0.8 0.5 0.4±0.05
●
FEATURES
1)Small mold type (KMD2) 2)High reliability 3)Low IR 0.8±0.05 1.6±0.05 1.2±0.05 0～0.03 KMD2●Structure 0.6±0.03 0.7±0.05
●Construction Silicon epitaxial planer ROHM : KMD2 JEDEC :JEITA : dot (year week factory)
●Taping dimensions (Unit : mm)
●Absolute maximum ratings (Ta=25C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forward current (*1) Io Forward current surge peak (60Hz ･1cyc.) Limits 30 30 0.5 5 150 40 to 150 Unit V V A A C C IFSM Tj Tstg (*1) On the Glass epoxy board , 180°Half Sine wave
●Electrical characteristics (Ta=25C) Parameter Symbol VF Forward Voltage Reverse Current IR Junction temperature Storage temperature Min. - Typ. 0.53 1.00 Max. 0.59 8.00 Unit V μA Conditions IF=0.5A VR=15V © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.12 - Rev.A Datasheet pdf - 1.2 RB550SS-30 Data Sheet 1 10000...
