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RB551SS-30 - Schottky Barrier Diode

Key Features

  • 1)Small mold type (KMD2) 2)High reliability 3)Low VF 0 ~0.03 KMD2 0.8 ±0.05 0.6 ±0.03 0.7 ±0.05 lStructure lConstruction Silicon epitaxial planer ROHM : KMD2 JEDEC :JEITA : dot (year week factory) lTaping dimensions (Unit : mm) www. DataSheet. co. kr lAbsolute maximum ratings (Ta=25C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forward current Io IFSM Forward current surge peak(60Hz・1cyc. ) Junction temperature Tj Storage temperature T.

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Datasheet Details

Part number RB551SS-30
Manufacturer ROHM
File Size 1.27 MB
Description Schottky Barrier Diode
Datasheet download datasheet RB551SS-30 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet Schottky Barrier Diode RB551SS-30 lApplications General Rectification lDimensions (Unit : mm) lLand size figure (Unit : mm) 0.8 1.6 ±0.05 1.2 ±0.05 0.5 0.4 ±0.05 lFeatures 1)Small mold type (KMD2) 2)High reliability 3)Low VF 0 ~0.03 KMD2 0.8 ±0.05 0.6 ±0.03 0.7 ±0.05 lStructure lConstruction Silicon epitaxial planer ROHM : KMD2 JEDEC :JEITA : dot (year week factory) lTaping dimensions (Unit : mm) www.DataSheet.co.kr lAbsolute maximum ratings (Ta=25C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forward current Io IFSM Forward current surge peak(60Hz・1cyc.