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RB558WMFH Datasheet PDF

ROHM Semiconductor RB558WMFH

Schottky Barrier Diode

Part No. RB558WMFH
Datasheet RB558WMFH Download
Manufacturer
ROHM Semiconductor
Description Schottky Barrier Diode
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RB558WMFH datasheet page 1 preview

FEATURES

High reliability Small mold type Super Low VF
●Inner Circuit
●Application
●Packaging Specifications Small current rectification Packing Embossed Tape Reel Size(mm) 180
●Structure Taping Width(mm) Basic Ordering Unit(pcs) 8 3000 Epitaxial planar Taping Code TL Marking 3W
●

ABSOLUTE MAXIMUM RATINGS

(Ta = 25ºC unless otherwise stated) Parameter Symbol Conditions Limits Unit Reverse voltage VR Reverse direct voltage 30 V Average rectified forward current Io Glass epoxy mounted、60Hz half sin waveform、resistive load、per diode 100 mA Peak forward surge current IFSM 60Hz half sin waveform、Non-repetitive、 one cycle、per diode、Ta=25ºC Junction temperature Tj - Storage temperature Tstg -
●Characteristics (Ta = 25ºC unless otherwise stated) Parameter Symbol Conditions Forward voltage VF1 IF=10mA VF2 IF=100mA Reverse current IR VR=10V ※Caution:static electricity 0.5 125 -40 ~ 125 A ℃ ℃ Value per diode Min. Typ. Max. Unit - - 0.35 V - - 0.49 V - - 10 μA Attention © 2016 ROHMCo., Ltd.All rights reserved.
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