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RBQ20NS45A - Schottky Barrier Diode

Features

  • 1)Cathode Common Dual type. （LPDS） 2)Low IR. BQ20NS 45A ① lConstruction Silicon epitaxial planer ROHM : LPDS JEITA : TO263S ① Manufacture Year, Week and Day lStructure ① lTaping dimensions (Unit : mm) ② ③ www. DataSheet. co. kr lAbsolute maximum ratings (Tc=25C) Parameter Symbol VRM Reverse voltage (repetitive peak) Reverse voltage (DC) VR Average rectified forward current (.
  • 1) Io IFSM Forward current surge peak (60Hz1cyc) (.
  • 2) Junction temperature Tj Storage temperature Tstg Limit.

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Datasheet Details

Part number RBQ20NS45A
Manufacturer ROHM
File Size 1.24 MB
Description Schottky Barrier Diode
Datasheet download datasheet RBQ20NS45A Datasheet
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Data Sheet Schottky Barrier Diode RBQ20NS45A lApplications General rectification lDimensions (Unit : mm) lLand size figure (Unit : mm) lFeatures 1)Cathode Common Dual type.（LPDS） 2)Low IR. BQ20NS 45A ① lConstruction Silicon epitaxial planer ROHM : LPDS JEITA : TO263S ① Manufacture Year, Week and Day lStructure ① lTaping dimensions (Unit : mm) ② ③ www.DataSheet.co.kr lAbsolute maximum ratings (Tc=25C) Parameter Symbol VRM Reverse voltage (repetitive peak) Reverse voltage (DC) VR Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz1cyc) (*2) Junction temperature Tj Storage temperature Tstg Limits 45 45 20 100 150 -40 to +150 Unit V V A A °C °C (*1) 60Hz half sin wave, 1/2 Io per diode. (*2) 60Hz half sin wave, one cycle, non-repetitive at Tj=25 °C.
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