RBQ20T65ANZ Datasheet PDF

Schottky Barrier Diode RBQ20T65ANZ lApplication General rectification lFeatures 1) Cathode common type. 2) Low IR 3) High reliability lConstruction Silicon epitaxial planar lDimensions (Unit : mm) 10.0±0.3 0.1 4.5±0.3 0.1 2.8±0.2 0.1 5.0±0.2 8.0±0.2 12.0±0.2 13.5MIN 15.0±0.4 0.2 8.0 1 1.2 1.3 0.8 (1) (2) (3) ROHM TO220FN 1 Manufacture Date 0.7±0.1 0.05 2.6±0.5 lPackage Dimensions (Unit : mm) 7 540 Anode Cathode Anode Data Sheet lStructure 34.5 lAbsolute maximum ratings (Tc= 25°C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current (*1) VRM VR Io Forward current surge peak (60Hz●1cyc) IFSM Junction temperature Tj Storage temperature Tstg (*1) Rating of per diode : Io/2 Limits 65 65 20 100 150 -40 to +150 Unit V V A A °C °C lElectrical characteristics (Tj = 25°C) Parameter Forward voltage Reverse current Symbol Min. VF IR - Typ. Max. - 0.69 - 300 Unit Conditions