ROHM Semiconductor RBR10BM40A
Schottky Barrier Diode
MAXIMUM RATINGS
(Tc= 25°C) Parameter Symbol Repetitive Peak Reverse Voltage Reverse Voltage Average Forward Rectified Current Non-repetitive Forward Current Surge Peak VRM VR Io IFSM Operating Junction Temperature Storage Temperature Tj Tstg lElectrical Characteristics (Tj = 25°C) Parameter Symbol Forward Voltage VF Reverse Current IR Thermal Resistance Rth(j-c) Conditions Duty≦0.5 Direct Reverse Voltage 60Hz half sin Wave, resistive load, IO/2 per diode, Tc=90°C Max. 60Hz half sin wave, one cycle, Non-repetitive at Ta=25