Inner circuit
(1) (2) (3)
for
2) Fast switching speed. 3) Drive circuits can be simple. d 4) Parallel use is easy. e 5) Pb-free lead plating ; RoHS compliant d 6) 100% Avalanche tested
en ns.
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RCD100N20
Nch 200V 10A Power MOSFET
Datasheet
Outline
VDSS
200V
CPT3
RDS(on) (Max.)
182m
(SC-63)
ID PD
Features 1) Low on-resistance.
10A 85W
Inner circuit
(1) (2) (3)
for
2) Fast switching speed. 3) Drive circuits can be simple.
d 4) Parallel use is easy.