ROHM Semiconductor RD3G500GN
Power MOSFET
| Part No. | RD3G500GN |
|---|---|
| Datasheet | RD3G500GN Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Power MOSFET |
| Buy | Stock & Price |
RD3G500GN Nch 40V 50A Power MOSFET VDSS RDS(on)(Max.) ID PD 40V 4.9mΩ ±50A 35W lFeatures 1) Low on - resistance 2) High power package (TO-252) 3) Pb-free lead plating ; RoHS compliant 4) Halogen free lOutline DPAK TO-252 lInner circuit Datasheet lPackaging specifications Packing Reel size (mm) lApplication Switching Type Tape width (mm) Quantity (pcs) Taping code Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche current, single pulse Avalanche energy, single pulse Power dissipation Junction temperature Operating junction and storage temperature range VDSS ID*1 IDP*2 VGSS IAS*3 EAS*3 PD*1 Tj Tstg 40 ±50 ±100 ±20 50 94 35 150 -55 to +150 Embossed Tape 330 16 2500 TL RD3G500GN Unit V A A V A mJ W ℃ ℃ © 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190527 - Rev.002 RD3G500GN lThermal resistance Parameter Thermal resistance, junction - case Datasheet Symbol RthJC*1 Values Unit Min.
