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RDN100N20
Transistors
Switching (200V, 10A)
RDN100N20
!Features 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. !External dimensions (Unit : mm)
TO-220FN
+0.3 10.0 − 0.1 0.3 4.5 + −0.1
3.2±0.2
2.8 −0.1
+0.2
0.4 15.0 + −0.2
12.0±0.2
!Application Switching
5.0±0.2 8.0±0.2
1.2
1.3
14.0±0.5
0.8
!Structure Silicon N-channel MOS FET
(1) Gate (2) Drain (3) Source
2.54±0.5
2.54±0.5 0.75 −0.05
+0.1
2.6±0.
RDN100N20 Datasheet
