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RDX100N60 - 10V Drive Nch MOS FET

Features

  • 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity. (1)Gate 15.0 12.0 8.0 2.5 1.3 1.2 0.8 2.54 (1) (2) (3) 2.54 0.75 2.6 z.

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Datasheet Details

Part number RDX100N60
Manufacturer ROHM
File Size 75.03 KB
Description 10V Drive Nch MOS FET
Datasheet download datasheet RDX100N60 Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com RDX100N60 Transistors 10V Drive Nch MOS FET RDX100N60 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 14.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity. (1)Gate 15.0 12.0 8.0 2.5 1.3 1.2 0.8 2.54 (1) (2) (3) 2.54 0.75 2.
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