RDX100N60 Datasheet | ROHM

.. Transistors 10V Drive Nch MOS FET RDX100N60 z Structure Silicon N-channel MOS FET z External dimensions (Unit : mm) TO-220FM φ3.2 4.5 2.8 14.0 z Features 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity. (1)Gate 0.8 2.54 (1) (2) (3) 2.6 z Applications Switching z Packaging specifications Package Type RDX100N60 Code Basic ordering unit (pieces) Bulk - 500 (2)Drain (3)Source z Inner circuit ∗1 ∗2 (1) (2) (3) ∗1 GATE PROTECTION DIODE ∗2 BODY DIODE (1) Gate (2) Drain (3) Source z Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS I D ∗1 IDP ∗2 IS ISP ∗2 IAS ∗3 EAS ∗4 PD Tch Tstg Limits 600 ±30 ±10 ±40 10 40 10 230 45 150 - 55 to +150 Unit V V A A A A A m J W °C °C Avalanche current Avalanche energy Total power dissipation (Tc=25°C) Channel temperature Range of storage temperature ∗1 Limited only by maximum temperature allowed ∗2 Pw 10µs, Duty cycle 1% ∗4 L = 4.0m H VDD=90V Rg=25Ω starting Tch=25°C ∗3 L = 4.0m H VDD=90V Rg=25Ω z Thermal resistance Parameter Channel to case Symbol Rth(ch-c) Limits Unit °C/W 1/2 Transistors z Electrical characteristics...