RF051VA2S Datasheet | ROHM

.. Diodes Fast recovery diode RF051VA2S z Applications High speed switching z Features 1) Small mold type (TUMD2) 2) Ultra high switching speed 3) High reliability. z Dimensions (Unit : mm) 0.17±0.1 　　 0.05 1.3±0.05 z Land size figure (Unit : mm) 1.9±0.1 2.5±0.2 z Constructure Silicon epitaxial planar 0.8±0.05 TUMD2 z Constructure ROHM : TUMD2 　　　 0.1 dot (year week factory) + day 0.6±0.2 z Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 1.75±0.1 φ1.55±0.1 　　　　　 0 0.25±0.05 3.5±0.05 8.0±0.2 1.43±0.05 4.0±0.1 φ1.0±0.2 　　　　　0 2.8±0.05 0.9±0.08 z Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current Forward current surge peak （60Hz- 1cyc） Junction temperature Storage temperature z Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR trr Symbol VRM VR Io IFSM Tj Tstg Limits 200 200 0.5 5 150 -55 to +150 Unit V V A A ℃ ℃ Min. - Typ. - Max. 0.98 10 25 Unit V µA ns Conditions IF=0.5A VR=200V IF=0.5A,IR=1A,Irr=0.25- IR 0.8 0.5 1/3 Diodes z Electrical characteristic curves 1000 REVERSE CURRENT:IR(n A) FORWARD CURRENT:IF(A) 100 10 1 0.1 0.01 Ta=25℃ Ta=125℃ Ta=150℃ Ta=75℃ Ta=-25℃ 1000000 100000 10000 1000 100 10 1 0 200 400 600 800 1000 0 50 100 150 200 FORWARD VOLTAGE：VF(m V) VF-IF CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS Ta=-25℃ Ta=75℃ Ta=25℃ Ta=125℃ 100 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(p F) Ta=150℃ 0.1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS...