RF071L4S Datasheet | ROHM

Features 1)Small power mold type.(PMDS) 2)high switching speed 3)Low forward voltage - Structure - Construction Silicon epitaxial planer - Taping dimensions(Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75± 0.1 0.3 5.5± 0.05 φ1.55 2.9±0.1 4.0±0.1 2.8MAX - Absolute maximum ratings (Tl=25C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature - Electrical characteristics (Tj=25C) Parameter Forward voltage Reverse current Reverse recovery time Thermal resistance VRM VR Io IFSM Tj Tstg Conditions D0.5 Direct voltage Glass epoxy substrate mounted Tl=120C 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25C 　 5.3± 0.1 0.05 9.5± 0.1 Limits 400 400 1 15 150 -55to+150 12± 0.2 4.2 Unit V V A A C C Symbol VF IR trr Rth(j-l) Conditions IF=0.7A VR=400V IF=0.5A,IR=1A,Irr=0.25×IR junction to lead Min. Typ. 1 0.01 20 Max. 1.25 10 25 23 Unit V μA ns C/W .rohm. ©2010 ROHM Co., Ltd. All rights reserved. 1/3 - Rev.A 　 .. Data Sheet - Electrical characteristics curves 1000 CAPACITANCE BETWEEN TERMINALS : Ct(p F) 100 f=1MHz REVERSE CURRENT : I R(n A) FORWARD CURRENT : I F(A) Tj=125 C Tj=150 C 100 Tj=125 C 10 Tj=75 C Tj=150 C 0.1 Tj=25 C Tj=75 C 1 Tj=25 C 0.001 0 500 1000 1500 2000 FORWARD VOLTAGE : V F(m V) VF-IF CHARACTERISTICS 0.1 0 100 200 300 400 REVERSE VOLTAGE : V R(V) VR-IR CHARACTERISTICS...