RF071MM2S Datasheet PDF

FEATURES

1) Ultra low forward voltage 2) Low switching loss
●Construction Silicon epitaxial planar type 0.9±0.1 ROHM : PMDU JEITA : SOD-123 1 : Manufacture Date 0.8±0.1
●Taping Dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ11..5555±00.0.055 1.75±0.1 PMDU
●Structure Cathode Anode 0.25±0.05 8.0±0.2 3.71±0.1 3.5±0.05 1.81±0.1
●Absolute maximum ratings (Ta= 25°C) 4.0±0.1 φ11..00±00..11 1.5MAX Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 200 V Reverse voltage VR Direct reverse voltage 200 V Direct forward current IF - Average rectified foward current Io On glass epoxy substrate 60Hz half sin wave , Resistive load Non-repetitive forward surge current IFSM 60Hz half sin wave ,Non-repetitive at Tj=25°C 1 0.7 15 A A A Operating junction temperature Tj - 150 °C Storage temperature Tstg - 55 to 150 °C
●Electrical characteristics (Tj = 25°C) Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage VF IF=0.7A 0.7 0.78 0.85 V Reverse current IR VR=200V...