ROHM Semiconductor RF073M2S
Fast recovery diode
RF073M2S Diodes Fast recovery diode RF073M2S zApplications High frequency rectification zExternal dimensions (Unit : mm) 0.80 + − 0.1 1.6 + − 0.1 zFeatures 1) Small power mold type (PMDS) 2) Ultra low VF 3) Very fast recovery 4) Low switching loss CATHODE MARK 2.6 + − 0.1 0.9 + − 0.1 3.5 + − 0.2 68 ROHM : PMDU 0.1 0.1+ − 0.05 zConstruction Silicon epitaxial planar zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Forward voltage (DC) Average rectified forward current Forward peak surge current (60Hz . 1cyc.) Junction temperature Storage temperature ∗ Tc max=120°C Mounting on glass epoxi board Symbol VRM VR IF ∗ IO ∗ IFSM Tj Tstg Limits 200 200 1.0 0.7 15 150 −55 to +150 Unit V V A A A °C °C zElectrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR trr Min. − − − Typ. 0.830 1.2 9 Max. 0.890 10 20 Unit V µA ns IF=0.7A VR=200V IF=0.5A, IR=1.0A, Irr=0.25 IR Conditions + Note) ESD sensitive product handing required.