ROHM Semiconductor RF081LAM2STF
Super Fast Recovery Diode
APPLICATIONS
General rectification PMDTM●
FEATURES
1) Low forward voltage 2) Low switching loss 3) High current overload capacity (2) 1.50±0.20 0.95±0.10 ROHM : PMDTM JEDEC : SOD-128 : Manufacture Date●Construction Silicon epitaxial planar type
●Taping Dimensions (Unit : mm)
●Structure Cathode Anode
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ABSOLUTE MAXIMUM RATINGS
(Ta= 25°C) Parameter Symbol Repetitive peak reverse voltage VRM Reverse voltage VR Average forward rectified current Io Non-repetitive forward surge current IFSM Junction temperature Tj Storage temperature Tstg●
ELECTRICAL CHARACTERISTICS
(Tj= 25°C) Parameter Symbol Forward voltage Reverse current Reverse recovery time VF IR trr Thermal resistance Rth(j-l) Conditions Duty≦0.5 Dir