RF081M2STF Datasheet PDF

FEATURES

1) Low forward voltage d 2) Low switching loss de
●Construction n s Silicon epitaxial planar type 0.9±0.1 ROHM : PMDU JEITA : SOD-123 1 : Manufacture Date 0.8±0.1
●Taping Dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ11..5555±00.0.055
●Structure Cathode Anode 0.25±0.05 1.75±0.1 mmeesign 1.81±0.1 4.0±0.1 φ11..00±00..11 3.5±0.05 8.0±0.2 3.37.7110.±00.81 1.5MAX o D
●Absolute maximum ratings (Ta= 25°C) c Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 200 V e w Reverse voltage VR Direct reverse voltage 200 V R e Average rectified foward current Io On glass epoxy substrate Ta= 45°C 60Hz half sin wave , Resistive load Tl= 130°C 0.8 1 A t N Non-repetitive forward surge current IFSM 60Hz half sin wave ,Non-repetitive at Tj=25°C 20 A o Operating junction temperature Tj - 150 °C NStorage temperature Tstg - 55 to 150 °C
●Electrical characteristics (Tj = 25°C) Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage VF IF=0.8A IF=1A - 0.81 0.9...