ROHM Semiconductor RF081MM2S
Super Fast Recovery Diode
Super Fast Recovery Diode RF081MM2S Data Sheet lSerise Standard Fast Recovery lDimensions (Unit : mm) 1.6±0.1 0.1±0.1 0.05 lLand size figure (Unit : mm) 1.2 2.6±0.1 3.5±0.0.212 0.85 3.05 lApplication General rectification 1 lFeatures 1) Low forward voltage 2) Low switching loss lConstruction Silicon epitaxial planar type 0.9±0.1 ROHM : PMDU JEITA : SOD-123 1 : Manufacture Date 0.8±0.1 lTaping Dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φf11..5555±00.0.055 PMDU lStructure Cathode Anode 0.25±0.05 1.75±0.1 8.0±0.2 3.71±0.1 3.5±0.05 1.81±0.1 4.0±0.1 φf11..00±00.1.1 1.5MAX lAbsolute maximum ratings (Ta= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 200 V Reverse voltage VR Direct reverse voltage 200 V Average rectified foward current Io On glass epoxy substrate Ta= 45°C 60Hz half sin wave , Resistive load Tl= 130°C 0.8 1 A Non-repetitive forward surge current IFSM 60Hz half sin wave ,Non-repetitive at Tj=25°C 20 A Operating junction temperature Tj - 150 °C Storage temperature Tstg - -55 to +150 °C lElectrical characteristics (Tj = 25°C) Parameter Symbol Conditions Min.