ROHM Semiconductor RF08L6S
Super Fast Recovery Diode
| Part No. | RF08L6S |
|---|---|
| Datasheet | RF08L6S Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Super Fast Recovery Diode |
| Buy | Stock & Price |
FEATURES
1)Small power mold type. （PMDS） 2)high switching speed 3)Low forward voltage 1.5±0.2 2.0±0.2 ROHM : PMDS JEDEC : SOD-106 Manufacture date ① ②●Structure
●Construction Silicon epitaxial planar
●Taping dimensions （Unit : mm） 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75± 0.1 0.3 5.5± 0.05 4.2 5.3± 0.1 φ1.55 9.5± 0.1 0.05 12± 0.2
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APPLICATIONS
General rectification 2.9±0.1 4.0±0.1 2.8MAX●Absolute maximum ratings （Tl=25℃） Parameter Symbol Repetitive peak Reverse voltage Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature VRM VR Io IFSM Tj Tstg Conditions D≦0.5 Direct voltage Glass epoxy substrate mounted 60Hz half sin wave, Non-repetitive Ta=25℃ one cycle peak value, Tj=25 ℃ Tl=100℃ Limits 600 600 0.8 20 150 -55to+150 Unit V V A A ℃ ℃
●Electrical characteristics （Tj=25℃） Parameter Symbol Forward voltage Reverse current Reverse recovery time Thermal Resistance VF IR trr Rth(j-l) Conditions IF=0.8A VR=600V IF=0.5A,IR=1A,Irr=0.25×I R junction to lead Min. － － － － Typ.
