RF101L4S Datasheet | ROHM

.. Diodes Fast recovery diode RF101L4S z Applications General rectification z Features 1) Small power mold type (PMDS) 2) Ultra low VF 3) Ultra high switching speed 4) Low switching loss z Constructure Silicon epitaxial planar z Dimensions (Unit : mm) z Land size figure (Unit : mm) 2.0 2.0 2.6±0.2 ① ② 0.1±0.02 　　　 0.1 1.5±0.2 2.0±0.2 5.0±0.3 4.5±0.2 1.2±0.3 PMDS ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture date z Structure z Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 0.3 5.5±0.05 φ1.55 2.9±0.1 4.0±0.1 2.8MAX z Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current Forward current surge peak （60Hz- 1cyc） Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 400 400 1 20 150 -55 to +150 5.3±0.1 　 0.05 9.5±0.1 12±0.2 Unit V V A A ℃ ℃ (- 1)Mounting on epoxy board. 180°Half sine wave z Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR Min. - Typ. - Max. 1.25 10 25 Unit V µA ns Conditions IF=1.0A VR=400V IF=0.5A,IR=1A,Irr=0.25- IR trr 1/3 Diodes z Electrical characteristic curves 1 10000 Ta=150℃ REVERSE CURRENT:IR(n A) FORWARD CURRENT:IF(A) Ta=125℃ 0.1 Ta=150℃ Ta=75℃ Ta=25℃ Ta=-25℃ 0.01 CAPACITANCE BETWEEN TERMINALS:Ct(p F) 1000 Ta=125℃ Ta=75℃ Ta=25℃ 10 Ta=-25℃ 100...