e. (TO-220) 2) Ultra Low V F 3) Very fast recovery 4) Low switching loss
(1) (2) (3)
8.0±0.2 12.0±0.2 15.0±0.4 0.2 13.5MIN 8.0
①.
Construction Silicon epitaxial planar
(1) (2) (3)
0.7±0.1 0.05
2.6±0.5
ROHM : ＴO220FN ① Manufacture Date.
Absoslute maximum ratings (Ta=25C) Parameter Limits Symbol Reverse voltage (repetitive peak) 200 VRM Reverse voltage (DC) 200 VR Average rectified forward current (.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
www.DataSheet4U.com
Fast recovery diodes
RF1601T2D
Applications General rectification Dimensions (Unit : mm)
4.5±0.3 0.1 10.0±0.3 0.1 2.8±0.2 0.1
Structure
1.2 1.3 0.8
5.0±0.2
Features 1) Cathode common type. (TO-220) 2) Ultra Low V F 3) Very fast recovery 4) Low switching loss
(1) (2) (3)
8.0±0.2 12.0±0.2 15.0±0.4 0.2 13.5MIN 8.0
①
Construction Silicon epitaxial planar
(1) (2) (3)
0.7±0.1 0.05
2.6±0.
RF1601T2D Datasheet
