• Part: RF1601T2D
  • Description: Fast Recovery Diodes
  • Category: Diode
  • Manufacturer: ROHM
  • Size: 320.51 KB
Download RF1601T2D Datasheet PDF
ROHM
RF1601T2D
RF1601T2D is Fast Recovery Diodes manufactured by ROHM.
Features 1) Cathode mon type. (TO-220) 2) Ultra Low V F 3) Very fast recovery 4) Low switching loss (1) (2) (3) 8.0±0.2 12.0±0.2 15.0±0.4   0.2 13.5MIN 8.0 ① - Construction Silicon epitaxial planar (1) (2) (3) 0.7±0.1 0.05 2.6±0.5 ROHM : TO220FN ① Manufacture Date - Absoslute maximum ratings (Ta=25C) Parameter Limits Symbol Reverse voltage (repetitive peak) 200 VRM Reverse voltage (DC) 200 VR Average rectified forward current (- 1) 16 Io Forward current surge peak (60Hz/1cyc) 80 IFSM Junction temperature 150 Tj Storage temoerature -55 to +150 Tstg (- 1)Business frequency, Rating of R-load, Tc=120C. 1/2 Io per diode Unit V V A A C C - Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR trr Min. - Typ. - Max. 0.93 10 30 Unit V μA ns Conditions IF=8A VR=200V IF=0.5A,IR=1A,Irr=0.25- I R .rohm. ©2010 ROHM Co., Ltd. All rights reserved. 1/3 - Rev.D - Electrical characteristics curves   .. Data Sheet 10 Ta=150 C Ta=150 C Ta=125 C 1000 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(p F) 1 Ta=125 C 0.1 Ta=75 C Ta=-25 C 0.01 Ta=25 C REVERSE CURRENT:IR(n A) FORWARD CURRENT:IF(A) 1000 Ta=75 C 100 Ta=25 C 10 Ta=-25 C 1 0.001 0 100 200 300 400 500 600 700 800 900 100 0 FORWARD VOLTAGE:VF(m V) VF-IF CHARACTERISTICS 0.1 0 50 100 150 REVERSE VOLTAGE:V R(V) VR-IR CHARACTERISTICS 200 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:V R(V) VR-Ct CHARACTERISTICS 890 Ta=25 C IF=8A n=30pcs 100 90 REVERSE CURRENT:IR(n A) 80 70 60 50 40 30 20 10 AVE:11.6n A Ta=25 C VR=200V...