RF1601T2D
RF1601T2D is Fast Recovery Diodes manufactured by ROHM.
Features
1) Cathode mon type. (TO-220) 2) Ultra Low V F 3) Very fast recovery 4) Low switching loss
(1) (2) (3)
8.0±0.2 12.0±0.2 15.0±0.4 0.2 13.5MIN 8.0
①
- Construction Silicon epitaxial planar
(1) (2) (3)
0.7±0.1 0.05
2.6±0.5
ROHM : TO220FN ① Manufacture Date
- Absoslute maximum ratings (Ta=25C) Parameter Limits Symbol Reverse voltage (repetitive peak) 200 VRM Reverse voltage (DC) 200 VR Average rectified forward current (- 1) 16 Io Forward current surge peak (60Hz/1cyc) 80 IFSM Junction temperature 150 Tj Storage temoerature -55 to +150 Tstg (- 1)Business frequency, Rating of R-load, Tc=120C. 1/2 Io per diode
Unit V V A A C C
- Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Reverse recovery time
Symbol VF IR trr
Min.
- Typ.
- Max. 0.93 10 30
Unit V μA ns
Conditions IF=8A VR=200V IF=0.5A,IR=1A,Irr=0.25- I R
.rohm. ©2010 ROHM Co., Ltd. All rights reserved.
1/3
- Rev.D
- Electrical characteristics curves
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Data Sheet
10 Ta=150 C
Ta=150 C Ta=125 C
1000 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(p F)
1 Ta=125 C 0.1 Ta=75 C Ta=-25 C 0.01 Ta=25 C
REVERSE CURRENT:IR(n A)
FORWARD CURRENT:IF(A)
1000 Ta=75 C 100 Ta=25 C 10 Ta=-25 C 1
0.001 0 100 200 300 400 500 600 700 800 900 100 0 FORWARD VOLTAGE:VF(m V) VF-IF CHARACTERISTICS 0.1 0 50 100 150 REVERSE VOLTAGE:V R(V) VR-IR CHARACTERISTICS 200 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:V R(V) VR-Ct CHARACTERISTICS
890 Ta=25 C IF=8A n=30pcs
100 90 REVERSE CURRENT:IR(n A) 80 70 60 50 40 30 20 10 AVE:11.6n A Ta=25 C VR=200V...