ROHM Semiconductor RF2001NS2D
Super Fast Recovery Diode
MAXIMUM RATINGS
(Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 200 V Reverse voltage Average current Non-repetitive forward surge current Operating junction temperature VR Io IFSM Tj Direct reverse voltage 60Hz half sin wave , resistive load 1/2Io per diode Tc=106°C 60Hz half sin wave, one cycle non-repetitive at Tj=25°C, per diode - 200 20 100 150 V A A °C Storage temperature Tstg - -55 to +150 °C lElectrical Characteristics (Tj = 25°C, per diode) Parameter Symbol Conditions Min.