ROHM Semiconductor RF2001NS3D
Fast Recovery Diodes
| Part No. | RF2001NS3D |
|---|---|
| Datasheet | RF2001NS3D Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Fast Recovery Diodes |
| Buy | Stock & Price |
APPLICATIONS
General rectification RF2001 NS3D ① Data Sheet●Land size figure (Unit : mm)
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FEATURES
1)Ultra low switching loss 2)High current overload capacity 3)Cathode common dual type●Construction Silicon epitaxial planer
●Structure ROHM : LPDS JEITA : TO263S ① Manufacture Year, Week and Day
●Taping dimensions (Unit : mm) ①②③
●Absolute maximum ratings (Tc=25C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage VRM VR Average rectified forward current Io Forward current surge peak Junction temperature Storage temperature IFSM Tj Tstg Conditions Duty≤0.5 Direct voltage 60Hz half sin wave resistive load , Tc=90°C 1/2 Io per diode 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25°C Limits 350 300 20 100 150 55 to 150 Unit V V A A C C
●Electrical characteristics (Tj=25C, per diode) Parameter Symbol Conditions Forward voltage Reverse current Reverse recovery time VF IF=10A IR VR=300V trr IF=0.5A,IR=1A,Irr=0.25×IR Thermal resistance Rth(j-c) junction to case Min. － － － － Typ.
