ROHM Semiconductor RF2001T2D
Fast Recovery Diode
| Part No. | RF2001T2D |
|---|---|
| Datasheet | RF2001T2D Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Fast Recovery Diode |
| Buy | Stock & Price |
APPLICATIONS
General rectification●
FEATURES
1) Cathode common type. (TO-220) 2) Ultra Low VF 3) Very fast recovery 4) Low switching loss●Construction Silicon epitaxial planar
●Dimensions (Unit : mm) 10.0±0.3 0.1
●Structure 4.5±0.3 0.1 2.8±0.2 0.1 (1) (2) (3) ① 1.2 1.3 0.8 (1) (2) (3) ROHM : TO220FN ① Manufacture Date 0.7±0.1 0.05 2.6±0.5
●Absoslute maximum ratings (Ta=25C) Parameter Symbol Limits Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) VRM VR Io 200 200 20 Forward current surge peak (60Hz/1cyc) Junction temperature IFSM Tj 100 150 Storage temoerature Tstg 55 to 150 (*1)Business frequencies, Rating of R-load, Tc=113C. 1/2 Io per diode Unit V V A A C C
●Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Reverse recovery time Symbol Min. Typ. Max. VF - 0.87 0.93 IR - 0.01 10 trr - 20 30 Unit Conditions V IF=10A μA VR=200V ns IF=0.5A,IR=1A,Irr=0.25*IR © 2011 ROHM Co., Ltd. All rights reserved. 1/3 20...
