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RF2001T3DFH Datasheet PDF

ROHM Semiconductor RF2001T3DFH

Fast Recovery Diode

Part No. RF2001T3DFH
Datasheet RF2001T3DFH Download
Manufacturer
ROHM Semiconductor
Description Fast Recovery Diode
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RF2001T3DFH datasheet page 1 preview

APPLICATIONS

General rectification
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FEATURES

1) Cathode common type. (TO-220) 2) Ultra Low VF 3) Very fast recovery 4) Low switching loss
●Construction Silicon epitaxial planar
●Dimensions (Unit : mm) 10.0±0.3 0.1 4.5±0.3 0.1 2.8±0.2 0.1 5.0±0.2 8.0±0.2 12.0±0.2 13.5MIN 15.0±0.4 0.2 8.0 ① 1.2 1.3 0.8 (1) (2) (3) ROHM : TO220FN ① Manufacture Date 0.7±0.1 0.05 2.6±0.5 Datasheet AEC-Q101 Qualified
●Structure (1) (2) (3)
●Absoslute maximum ratings (Ta=25C) Parameter Symbol Limits Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) VRM VR Io 350 300 20 Forward current surge peak (60Hz/1cyc) Junction temperature IFSM Tj 100 150 Storage temoerature Tstg 55 to 150 (*1)Business frequency, Rating of R-load, Tc=113C 1/2 Io per diode Unit V V A A C C
●Electrical characteristic (Ta=25C) Parameter Forward voltage Re
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