ROHM Semiconductor RF201L2S
Fast Recovery Diode
APPLICATIONS
General rectification●
FEATURES
1)Small power mold type. (PMDS) 2)Ultra low VF 3)Ultra high switching speed 4)Low switching loss●Construction Silicon epitaxial planer
●Dimensions(Unit : mm) 2.6±0.2
●Land size figure (Unit : mm) 2.0 6 67 ①② 1.5±0.2 0.1±0.02 0.1 2.0±0.2 PMDS
●Structure ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture date
●Taping dimensions(Unit : mm)
●Absolute maximum ratings(Ta=25°C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current (*1) VRM VR Io Forward current surge peak (60Hz●1cyc) Junction temperature IFSM Tj Storage temperature Tstg (*1)Mounted on epoxy board. Tc=95 C max. Limits 200 200 2 20 150 55 to 150 Unit V V A A °C °C
●Electrical characteristics(Ta=25°C) Parameter Symbol Min. Typ. Max. Forward voltage VF - 0.815 0.87 Reverse current I