ROHM Semiconductor RF201LAM4S
Super Fast Recovery Diode
MAXIMUM RATINGS
(Tl= 25°C) Parameter Symbol Repetitive peak reverse voltage VRM Reverse voltage VR Average forward rectified current Io Non-repetitive forward surge current IFSM Junction temperature Tj Storage temperature Tstg lElectrical Characteristics (Tj= 25°C) Parameter Symbol Forward voltage Reverse current Reverse recovery time VF IR trr Thermal resistance Rth(j-l) Conditions Limits Unit Duty≦0.5 400 V Direct reverse voltage Gla