ROHM Semiconductor RF2L6S
Super Fast Recovery Diode
| Part No. | RF2L6S |
|---|---|
| Datasheet | RF2L6S Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Super Fast Recovery Diode |
| Buy | Stock & Price |
FEATURES
1)Small power mold type. (MDS) 2)High switching speed 3)Low forward voltage PMDS 1.5±0.2 2.0±0.2●Structure ROHM : PMDS JEDEC : SOD-106 Manufacture date
●Construction Silicon epitaxial planar
●Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75± 0.1 0.3 5.5± 0.05 4.2 5.3± 0.1 φ1.55 9.5± 0.1 0.05 12± 0.2
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APPLICATIONS
General rectification 2.9±0.1 4.0±0.1 2.8MAX●Absolute maximum ratings (Tl=25 C) Parameter Symbol VRM Repetitive peak Reverse voltage VR Reverse voltage Average rectified forward current(*1) Forward current surge peak (60Hz,1cyc,Tj=25 C) Junction temperature Storage temperature Io IFSM Limits 600 600 1.5 40 Unit V V A A 150 Tj C -55to+150 Tstg C (*1) Half sinwave on the Glass epoxy substrate (size : 50mm×50mm),Tc=90 CMax.
●Electrical characteristics (Tj=25 C) Parameter Symbol Forward voltage Reverse current Reverse recovery time Thermal Resistance VF IR trr Rth (j-l) Conditions IF=1.5A VR=600V Min. - Typ. 1.25 0.03 20 - 2.0 Max. 1.55 10 35 23 Unit V μA ns C/W IF=0.5A,IR=1A,Irr=0.25×I R junction to lead ©2010 ROHM Co., Ltd.
