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RF301B2S Datasheet PDF

ROHM Semiconductor RF301B2S

Fast Recovery Diode

Part No. RF301B2S
Datasheet RF301B2S Download
Manufacturer
ROHM Semiconductor
Description Fast Recovery Diode
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RF301B2S datasheet page 1 preview
Fast Recovery Diode RF301B2S zApplications General rectification zDimentions(Unit : mm) z Land size figure(Unit : mm) 6.0 zFeatures 1)Power mold type(CPD) 2)Ultra Low VF 3)Very fast recovery 4)Low switching loss zConstruction Silicon epitaxial planar ROHM : CPD JEITA : SC-63 Manufacture Date CPD 1.6 1.6 2.3 2.3 zStructure (2) zTaping specifications(Unit : mm) (1) (3) Symbol VRM VR Io IFSM Tj Tstg (*1)Bussiness frequencies, Rating of R-load, Tc=128°C MAX. Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current(*1) Forward current surge peak (60Hz / 1cyc)(*1) Junction temperature Storage temperature zAbsolute maximum ratings (Ta=25°C) Parameter Limits 200 200 3 40 150 -55 to +150 Unit V V A A °C °C zElectrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Reverse recovery time Thermal impedance Symbol VF IR trr θjc Min. - Typ. 0.87 10nA 14 - Max. 0.93 10 25 6 Unit V µA ns °C/W Conditions IF=3A VR=200V IF=0.5A,IR=1A,Irr=0.25*I R JUNCTION TO CASE ©2009 ROHM Co., Ltd.
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