RF4C050AP Datasheet PDF

RF4C050AP Pch -20V -10A Middle Power MOSFET Datasheet VDSS RDS(on)(Max.) ID PD -20V 26mΩ ±10A 2W lFeatures 1) Low on - resistance. 2) High Power small mold Package (HUML2020L8). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. lOutline DFN2020-8S HUML2020L8 lInner circuit lPackaging specifications Packing Embossed Tape Reel size (mm) 180 lApplication Switching Type Tape width (mm) Quantity (pcs) 8 3000 Load switch Taping code TR Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) SJ Parameter Symbol Value Unit Drain - Source voltage VDSS -20 V Continuous drain current ID ±10 A Pulsed drain current IDP*1 ±20 A Gate - Source voltage VGSS 0～-8 V Power dissipation PD*2 2 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ © 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190527 - Rev.003 RF4C050AP lThermal resistance Parameter Thermal resistance, junction - ambient Datasheet Symbol RthJA*2 Values Min. Typ. Max.