RF4E075AT Datasheet PDF

RF4E075AT Pch -30V -7.5A Middle Power MOSFET VDSS RDS(on)(Max.) ID PD -30V 21.7mΩ ±7.5A 2W lFeatures 1) Low on - resistance. 2) High Power small mold Package (HUML2020L8). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. lOutline HUML2020L8 lInner circuit Datasheet lApplication Switching Load switch lAbsolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Avalanche current Power dissipation Junction temperature Range of storage temperature lPackaging specifications Packing Reel size (mm) Type Tape width (mm) Basic ordering unit (pcs) Taping code Marking Embossed Tape 180 8 3000 TCR JT Symbol VDSS ID ID,pulse*1 VGSS EAS*2 IAS*2 PD*3 Tj Tstg Value -30 ±7.5 ±30 ±20 10.6 -2.7 2 150 -55 to +150 Unit V A A V mJ A W ℃ ℃ © 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150218 - Rev.001 RF4E075AT lThermal resistance Parameter Thermal resistance, junction - ambient Datasheet Symbol RthJA*3 Values Min.